| PART |
Description |
Maker |
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| KM44S32030 |
8M x 4Bit x 4 Banks Synchronous DRAM(8M x 4浣?x 4缁??姝ュ???AM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM44S16020B |
8M x 4Bit x 2 Banks Synchronous DRAM(8M x 4x 2组同步动态RAM) 8米4位2银行同步DRAM米4位2组同步动态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| K4E660411D-TC60 K4E640411D-JC50 K4E640411D-JC60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| KM44C16000B KM44C16100B |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163L |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W9751G8KB |
16M x 4 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
| V58C265404S |
HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
|
MOSEL[Mosel Vitelic, Corp]
|
| W9751G8JB W9751G8JB-3 |
16M ?4 BANKS ?8 BIT DDR2 SDRAM
DDR DRAM, PBGA84
|
Winbond
WINBOND ELECTRONICS CORP
|
| K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4S280432D-TC/L1H K4S280432D-TC/L1L K4S280432D-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
